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A NEW TRANSITOR STRUCTURE AND ITS APPLICATION TO MICROENERGY LOGIC.WILAMOWSKI B.1977; BULL. ACAD. POLON. SCI., SCI. TECH.; POLOGNE; DA. 1977; VOL. 25; NO 5; PP. 409-413; ABS. RUSSE; BIBL. 5 REF.Article

MODELLING OF DOUBLE DIFFUSED TRANSISTORS: DOUBLE EXPONENTIAL DISTRIBUTION OF IMPURITY PROFILESRUSTAGI SC; CHATTOPADHYAYA SK.1979; INDIAN J. PURE APPL. PHYS.; ISSN 0019-5596; IND; DA. 1979; VOL. 17; NO 3; PP. 166-170; BIBL. 7 REF.Article

AN ANALYSIS OF BASE TRANSIT TIME OF DIFFUSED BASE TRANSISTORSKAUSHIK DK; CHATTOPADHYAYA SK.1978; INDIAN J. PURE APPL. PHYS.; IND; DA. 1978; VOL. 16; NO 8; PP. 770-775; BIBL. 14 REF.Article

IC-VCE CHARACTERISTICS OF DOUBLE DIFFUSED BIPOLAR TRANSISTORS UNDER LOW LEVEL INJECTIONSCOTT D; ROULSTON D.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 3; PP. 201-207; BIBL. 8 REF.Article

DIFFUSION CAPACITY OF SILICON DIFFUSED PLANAR TRANSISTOR UNDER INVERSE OPERATING CONDITIONPRASAD HC; MISRA M.1978; INDIAN J. PURE APPL. PHYS.; IND; DA. 1978; VOL. 16; NO 10; PP. 881-883Article

THE EFFECT OF AVALANCHE INJECTION ON SECONDARY BREAKDOWN IN DRIFT TRANSISTORS.PETROV BK.1976; RADIO ENGNG ELECTRON. PHYS.; U.S.A.; DA. 1976; VOL. 21; NO 12; PP. 117-123; ABS. FR.; BIBL. 15 REF.Article

INFLUENCE DE L'INJECTION D'AVALANCHE SUR LE SECOND CLAQUAGE DES TRANSISTORS A DERIVEPETROV BK.1976; RADIOTEKH. I ELEKTRON.; S.S.S.R.; DA. 1976; VOL. 21; NO 12; PP. 2601-2607; BIBL. 15 REF.Article

CURRENT AND BASE TRANSIT-TIME RELATIONS IN NORMAL AND INVERTED (IIL) BIPOLAR TRANSISTORS.ELSAID MH; ROULSTON DJ; WATT LAK et al.1977; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 6; PP. 761-763; BIBL. 3 REF.Article

PERIPHERAL EMITTER-BASE JUNCTION CAPACITANCE IN BIPOLAR TRANSISTORSROULSTON DJ; KUMAR RC.1979; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1979; VOL. 26; NO 5; PP. 810-811; BIBL. 5 REF.Article

A STUDY OF DIFFUSED BIPOLAR TRANSISTORS BY ELECTRON MICROSCOPYBULL CJ; ASHBURN P; GOWERS JP et al.1980; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1980; VOL. 23; NO 9; PP. 953-966; BIBL. 27 REF.Article

BASE RETARDATION IN IMPLANTED-DIFFUSED TRANSISTORS.TANSLEY TL.1975; MICROELECTRONICS; G.B.; DA. 1975; VOL. 6; NO 3; PP. 16-20; BIBL. 19 REF.Article

EFFECT OF MASKING GEOMETRY ON GAIN OF BIPOLAR TRANSISTORSABBASI SA; BRUNNSCHWEILER A.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 7; PP. 270-271; BIBL. 5 REF.Article

DUAL-GATE DEPLETION-MODE DMOS TRANSISTOR FOR LINEAR GAIN-CONTROL APPLICATIONKWAN SH; CHUANG CT; MULLER RS et al.1979; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1979; VOL. 26; NO 7; PP. 1053-1058; BIBL. 9 REF.Article

A COMPUTER-AIDED DESIGN MODEL FOR HIGH-VOLTAGE DOUBLE DIFFUSED MOS (DMOS) TRANSISTORS.POCHA MD; DUTTON RW.1976; I.E.E.E.J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1976; VOL. 11; NO 5; PP. 718-726; BIBL. 15 REF.Article

THE EFFECT OF EDGE CROWDING ON THE INTRINSIC ADMITTANCES OF A DRIFT TRANSISTOR.MAHAPATRA KC; SINHARAY NR.1977; INTERNATION. J. ELECTRON.; G.B.; DA. 1977; VOL. 43; NO 4; PP. 329-344; BIBL. 11 REF.Article

TEMPERATURE DEPENDENCE OF FT OF SILICON DOUBLE-DIFFUSED BIPOLAR TRANSISTORS.OOSAKA F.1978; SOLID-STATE ELECTRON.; GBR; DA. 1978; VOL. 21; NO 4; PP. 665-666; BIBL. 7 REF.Article

CURRENT GAIN VARIABILITY IN NORMAL AND 12 L BIPOLAR TRANSISTORSBHATTACHARYYA AB; JINDAL S; SUBRAMANIAN S et al.1979; I.E.E. SOLID-STATE ELECTRON DEVICES; GBR; DA. 1979; VOL. 3; NO 4; PP. 107-116; BIBL. 21 REF.Article

THE EFFECT OF EDGE-CROWDING ON THE INTRINSIC PARAMETERS OF A DRIFT TRANSISTOR.MAHAPATRA KC; SINHARAY NR.1977; INTERNATION. J. ELECTRON.; G.B.; DA. 1977; VOL. 43; NO 4; PP. 345-352; BIBL. 10 REF.Article

A MONOLITHIC 200-V CMOS ANALOG SWITCH.PLUMMER JD; MEINDL JD.1976; I.E.E.E. J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1976; VOL. 11; NO 6; PP. 809-817; BIBL. 14 REF.Article

INCREASE OF GATE CAPACITANCE IN DMOSTSTIKVOORT EF.1978; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1978; VOL. 25; NO 12; PP. 1388-1394; BIBL. 7 REF.Article

GENERATION OF TRANSIENT RESPONSE OF NONLINEAR BIPOLAR TRANSISTOR CIRCUITS FROM DEVICE FABRICATION DATA.HAJJ IN; ROULSTON DJ; BRYANT PR et al.1977; I.E.E.E. J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1977; VOL. 12; NO 1; PP. 29-38; BIBL. 17 REF.Article

A single transistor electrically alterable cellCACHARELIS, P; FONG, E; TORGERSON, E et al.IEEE electron device letters. 1985, Vol 6, Num 10, pp 519-521, issn 0741-3106Article

TECHNOLOGIES ET APPLICATIONS DES TRANSISTORS DE PUISSANCE.1978; TOUTE ELECTRON.; FRA; DA. 1978; NO 431; PP. 27-36; BIBL. 3 REF.Article

A NEW DOPING TECHNIQUE WITHOUT SIO2 PATTERNING USING AN INORGANIC PHOTORESISTYOSHIKAWA A; OCHI O; TAKEDA A et al.1982; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 5; PP. 1074-1077; BIBL. 10 REF.Article

DEPLETION-REGION WIDTH OF A GAUSSIAN GRADED P-N JUNCTION UNDER HIGH FORWARD BIAS CONDITIONSJAIN LC.1979; ARCH. ELEKTRON. UBERTRAG.-TECH.; DEU; DA. 1979; VOL. 33; NO 1; PP. 39-42; ABS. GER; BIBL. 9 REF.Article

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